student at National University of Defense Technology, China
Peng Yang is a dedicated researcher pursuing a Ph.D. at the National University of Defense Technology, focusing on cutting-edge advancements in electronic science and technology. With an M.S. in Microelectronics and Solid-State Electronics from Sun Yat-Sen University, Peng has consistently demonstrated excellence in the fields of ferroelectric transistors, neuromorphic computing, optoelectronic devices, and biosensing. His passion lies in bridging theoretical knowledge with practical applications, driving innovation in emerging electronic technologies.
Publication Profile
orcid
📚 Education
🎓 M.S. in Microelectronics and Solid-State Electronics – Sun Yat-Sen University, Guangzhou, 2020🎓 Ph.D. Candidate in Electronic Science and Technology – National University of Defense Technology, Changsha (ongoing)
Peng’s academic journey reflects a strong foundation in microelectronics and an ongoing pursuit of deeper expertise in advanced electronic systems.
💼 Experience
🔬 Ph.D. Researcher – National University of Defense Technology (2020–Present)📡 Graduate Research Assistant – Sun Yat-Sen University (2018–2020)
Peng’s hands-on experience spans across semiconductor device design, fabrication, and innovative electronic component research.
🏆 Awards and Honors
🏅 Best Paper Award – International Conference on Advanced Electronics (2022)🌟 National Scholarship for Academic Excellence (2019)🏆 Research Excellence Award – Sun Yat-Sen University (2020)
Peng’s dedication to his field is recognized by prestigious awards, celebrating his contributions and academic achievements.
🔍 Research Focus
🔋 Ferroelectric Transistors🧠 Neuromorphic Computing💡 Optoelectronic Devices🩺 Biosensing Technologies
Peng Yang’s research drives the development of next-generation electronics, focusing on technologies that blend computational power with innovative sensing capabilities.
Publications 📖
Multistates and Ultralow-Power Ferroelectric Tunnel Junction by Inserting Al₂O₃ Interlayer
📅 IEEE Transactions on Electron Devices, 2025-01
🔗 DOI: 10.1109/TED.2024.3503533
👥 Contributors: Yefan Zhang, Shihao Yu, Peng Yang, Xiaopeng Luo, Hui Xu, Xi Wang, Haijun Liu, Sen Liu, Qingjiang Li
Fully Electrically Modulated Hetero-Synapses With Lateral Multigate Ferroelectric Thin Film Transistor
📅 IEEE Transactions on Electron Devices, 2024
🔗 DOI: 10.1109/ted.2024.3456775
👥 Contributors: Peng Yang, Hui Xu, Shihao Yu, Yang Liu, Bing Song, Haijun Liu, Sen Liu, Qingjiang Li
The Optical-Electronic Integrated Spiking Neurons Based on Antiferroelectric Thin-Film Transistors
📅 IEEE Transactions on Electron Devices, 2024
🔗 DOI: 10.1109/ted.2024.3450440
👥 Contributors: Luo Xiaopeng, Peng Yang, Yu Shihao, Xu Guo, Yefan Zhang, Yang Liu, Yi Sun, Yinan Wang, Sen Liu, Qingjiang Li
Tailoring Dynamic Synaptic Plasticity in FeTFT Optoelectronic Synapse for Associative Learning
📅 Advanced Electronic Materials, 2024-12-30
🔗 DOI: 10.1002/aelm.202400732
👥 Contributors: Peng Yang, Hui Xu, Xiaopeng Luo, Shihao Yu, Yang Liu, Yefan Zhang, Xu Guo, Bing Song, Zhiwei Li, Sen Liu
Inhibiting the Imprint Effect of the TiN/HZO/TiN Ferroelectric Capacitor by Introducing a Protective HfO2 Layer
📅 AIP Advances, 2024-08-01
🔗 DOI: 10.1063/5.0222725
👥 Contributors: Yu Shihao, Yefan Zhang, Peng Yang, Xiaopeng Luo, Zhenyuan Sun, Haijun Liu, Sen Liu
Multistate Capability Improvement of BEOL Compatible FeFET by Introducing an Al2O3 Interlayer
📅 IEEE Transactions on Electron Devices, 2023-11
🔗 DOI: 10.1109/ted.2023.3309776
👥 Contributors: Yu Shihao, Qin Wang, Yefan Zhang, Peng Yang, Xiaopeng Luo, Haijun Liu, Changlin Chen, Qingjiang Li, Sen Liu
A Large Memory Window and Low Power Consumption Self‐Rectifying Memristor for Electronic Synapse
📅 Electronics Letters, 2023-01
🔗 DOI: 10.1049/ell2.12717
👥 Contributors: Qingjiang Li, Shihao Yu, Peng Yang, Qin Wang, Sen Liu
Improved Symmetry of Ferroelectric Switching in HZO Based MFM Capacitors Enabled by High Pressure Annealing
📅 IEEE Journal of the Electron Devices Society, 2022
🔗 DOI: 10.1109/jeds.2022.3221727
👥 Contributors: Qin Wang, Yefan Zhang, Peng Yang, Rongrong Cao, Haijun Liu, Hui Xu, Sen Liu, Qingjiang Li
🔹 Conclusion
Peng Yang is a strong candidate for a Best Researcher Award, given his contributions to cutting-edge technologies and an impressive publication record. While his collaborative achievements stand out, focusing on individual accolades, project leadership, and public engagement will further bolster his eligibility. Overall, his research trajectory reflects immense promise, positioning him as a rising star in the field of microelectronics and solid-state devices.